Gate-free Monolayer WSe2 pn Diode

2020-09-07 16:01:24 | Share this post:

By utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe2 pn homojunction on the supporting ferroelectric BiFeO3 substrate. This non-volatile WSe2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron microspectroscopy. 

 

 

 

Reference:

Nature Commun. 9, 3143 (2018).

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Gate-free Monolayer WSe2 pn Diode

By utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe2 pn homojunction on the supporting ferroelectric BiFeO3 substrate. This non-volatile WSe2 pn homojunction is demons...

Read More