2015-02-05 11:13:00

NCKU Transnational Research Team Develops First All-electric Spin Transistor

2015-02-05 11:13:00 | Share this post:

Scientists have long been puzzled by the spin-field-effect transistor (spin FET) and great efforts have been put into attempt of solving the long challenged problems. Now a Tainan-based National Cheng Kung University (NCKU) research team has successfully developed the first spin FET.

 

ImgDesc
ImgDesc


A team led by Prof. Tse-Ming Chen from the Department of Physics at NCKU, in cooperation with Cavendish Laboratory, and University College of London in UK, has developed an all-electric all-semiconductor spin FET, the university revealed at a press conference in Taipei today.

Prof. Chen said, the spin FET, since envisioned by Datta and Das in 1990, has long been believed to be the solution where Moore’s law fails to deliver.

However, the realization of a functional spin FET has hitherto not been achieved, owing to several technical problems such as the low spin-injection efficiency, the limited spin lifetime, and the phase spread of the accumulated spins, according to Prof. Chen.

 



He said, “We solved the problems by employing two quantum point contacts as spin injectors and detectors.”

“We exploit two engineering architectures of spin-orbit coupling, the interaction between the electron’s spin and its motion, on the device to electrically inject, manipulate, and detect spins,” he added.

Prof. Chen also explained, The all-electric all-semiconductor characteristics of such a device allow it to be easily compatible with large-scale integrated circuits and hold the most promise for information processing in the post-CMOS era.

Their results published in the January 2015 issue of Nature Nanotechnology with additional introduction in news & views article written by Marc Cahay.

The technology underlying the study is now in the process of applying for a patent, according to Prof. Chen.

 

 

Source: NCKU News Center

Share this post:

Related articles

量子記憶體高效檢測法 成大研究登國際指標期刊《PRX Quantum》

2022-05-24 08:00:00

Research Highlights

量子記憶體(Quantum memory)檢測效能重要突破!國立成功大學前沿量子科技研究中心主任陳岳男與博士後研究員古煥宇,攜手歐亞跨國團隊發展新穎的「量子網路中記憶體之效能檢測」方法,提出判定合格量子記憶體的新方向,有助臺灣掌握量子...

Read More

Developments in Light-Controllable Multi-Digit Memory Materials

2019-05-22 14:26:00

Research Highlights

A research team led by Professors Jan-Chi Yang and Yi-Chun Chen of the National Cheng Kung University (NCKU) physics ...

Read More

下世代超輕薄可捲曲晶片 張景皓團隊找出可撓式奈米科技關鍵

2022-07-19 11:40:00

Research Highlights

超輕薄,可捲曲,豐富應用性的晶片不再是夢想。國立成功大學物理系副教授兼成大前沿量子科技研究中心張景皓與其團隊,共同分析「石墨烯」材料,發現捲曲後有新的獨特應用功能性,為此與團隊投入研究,從無到有,建立起基礎物理(量子態)模型。研究成果...

Read More

成大 90 and beyond 計畫學者路克史密斯  研究成果登國際期刊 PRL

2022-03-15 11:57:00

Research Highlights

成大新進學人傳捷報!國立成功大學「NCKU 90 and Beyond」培育計畫助理研究教授路克.史密斯(Luke Smith)2021 年 11 月甫到成大即以第一作者發表文章,內容為藉由產生自旋軌道交互作用,進而達到全電性控制近藤...

Read More